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Polarization‐dependent gain and state of polarization effects on linewidth of semiconductor fiber ring lasers
Author(s) -
Awad Hazem,
Atieh Ahmad,
Hall Trevor J.
Publication year - 2008
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22984
Subject(s) - laser linewidth , lasing threshold , materials science , laser , optoelectronics , semiconductor , optics , fiber laser , microwave , polarization (electrochemistry) , semiconductor laser theory , physics , chemistry , quantum mechanics
Linewidth measurements of a tuneable, high power, narrow linewidth semiconductor fiber ring laser are presented. The laser had a typical output power of 9.72 dBm with a corresponding 170 kHz FWHM and 311 kHz 20‐dB linewidth. We demonstrate experimentally the dependence of laser's linewidth on SOP of the lasing light and polarization‐dependent gain of semiconductor gain medium. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 31–34, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22984
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