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33.4: Distinguished Paper : Oxide Semiconductor Thin‐Film Transistors Using Oxygen Barriers and a Wet‐Chemical Back‐Channel Etch Step
Author(s) -
Herrmann Marcus,
Fruehauf Norbert
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00124.x
Subject(s) - materials science , optoelectronics , transistor , thin film transistor , homogeneity (statistics) , threshold voltage , oxide , semiconductor , oxygen , channel (broadcasting) , voltage , electrical engineering , nanotechnology , computer science , chemistry , layer (electronics) , engineering , metallurgy , organic chemistry , machine learning
Abstract We present bottom gate staggered oxide semiconductor TFTs manufactured by using a highly selective wet‐chemical backchannel etch step. To achieve stable contacts and great threshold voltage homogeneity we introduced oxygen barriers to suppress oxygen flow within the device. An AMLCD was realized to show the feasibility for industrial application.