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52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide
Author(s) -
Koezuka Junichi,
Okazaki Kenichi,
Hirohashi Takuya,
Takahashi Masahiro,
Adachi Shunsuke,
Tsubuku Masashi,
Yamazaki Shunpei,
Kanzaki Yohsuke,
Matsukizono Hiroshi,
Kaneko Seiji,
Mori Shigeyasu,
Matsuo Takuya
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06315.x
Subject(s) - thin film transistor , crystallinity , materials science , channel (broadcasting) , oxide , optoelectronics , composite material , electrical engineering , metallurgy , layer (electronics) , engineering
Abstract We have fabricated a back‐channel‐etched TFT using the CAAC‐IGZO film that we developed. As a factor of success in manufacturing stable back‐channel‐etched TFTs, it is considered that CAAC‐IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energy of c‐IGZO and that of a‐IGZO.