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Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density
Author(s) -
Rudolph P.,
Neubert M.,
Arulkumaran S.,
Seifert M.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320104
Subject(s) - dislocation , crystal (programming language) , crystallography , materials science , physics , chemistry , computer science , programming language
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