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Dislocation density in heteroepitaxial indium arsenide layers
Author(s) -
Trifonova E. P.,
Hitova L.
Publication year - 1990
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170250615
Subject(s) - dislocation , materials science , indium , impurity , condensed matter physics , layer (electronics) , arsenide , gallium arsenide , crystallography , phase (matter) , chemistry , nanotechnology , optoelectronics , composite material , physics , organic chemistry
Abstract In As layers have been grown by CVD on (111)B‐oriented GaAs substrates. The dislocation density ( N D ) distribution through the layer thickness has been studied. N D is dependent on the mole fraction of AsCl 3 in the gaseous phase and, consequently, on the current carriers concentration. This results in the supposition that the decreasing of N D in the layers after a “critical” thickness is due to the “pinning” of dislocations at impurity atoms which form stronger bonds with the host In or As atoms than the bond In–As, an effect which is known for bulk GaAs and InP crystals.