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Dislocation etch‐pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt
Author(s) -
Bolkhovityanov Yu. B.,
Bolkhovityanova R. I.,
Trukhanov E. M.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200408
Subject(s) - dissolution , dislocation , materials science , substrate (aquarium) , etch pit density , crystallography , etching (microfabrication) , composite material , chemical engineering , chemistry , geology , oceanography , layer (electronics) , engineering
Abstract It has been showed that the saturated GaSb melt when contacting with a (100) GaAs substrate or a thin film selectively dissolves these solid phases. The dissolved thickness can be made so small as 500 Å and the revealed etch‐pits are corresponding to the entrances of dislocation lines on the examined surface.