Transition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals

Impurity‐doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)‐doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a doped‐Si/SiO 2 composite that, upon HF etching and hydrosilylation with 1‐ n ‐octadecene, produces free‐standing octadecyl‐capped doped SiNCs (diameter≈3 to 8 nm; dopant <0.2 atom %). Metal‐doping triggers a red‐shift of the SiNC photoluminescence (PL) of up to 270 nm, while maintaining high PL quantum yield (26 % for Co doping).