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Tailoring the Dimensionality of Hybrid Perovskites in Mesoporous Carbon Electrodes for Type‐II Band Alignment and Enhanced Performance of Printable Hole‐Conductor‐Free Perovskite Solar Cells
Author(s) -
Chen Xiayan,
Xia Yongkang,
Huang Qingyi,
Li Zhe,
Mei Anyi,
Hu Yue,
Wang Ti,
Cheacharoen Rongrong,
Rong Yaoguang,
Han Hongwei
Publication year - 2021
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.202100292
Subject(s) - materials science , perovskite (structure) , mesoporous material , conductor , electrode , optoelectronics , energy conversion efficiency , mesoscopic physics , solution process , layer (electronics) , carbon fibers , nanotechnology , chemical engineering , composite material , catalysis , biochemistry , chemistry , physics , quantum mechanics , engineering , composite number
Printable hole‐conductor‐free perovskite solar cells (PSCs) have attracted intensive research attention due to their high stability and simple manufacturing process. However, the cells have suffered severe potential loss in the absence of the hole transporting layer. The dimensionality of the perovskite absorber in the mesoporous carbon electrodes by conducting post‐treatments is reduced. The low‐dimensional perovskites possess wide‐bandgaps and form type‐II band alignment, favoring directional charge transportation and thus enhancing the device performance. For the cells using MAPbI 3 (MA = methylammonium) as the light absorber, the open‐circuit voltage ( V OC ) is significantly enhanced from 0.92 to 0.98 V after posttreatment, delivering an overall efficiency of 16.24%. For the cells based on FAPbI 3 (FA = formamadinium), a high efficiency of 17.47% is achieved with V OC of 1.02 V, which are both the highest reported values for printable hole‐conductor‐free PSCs. This strategy provides a facile method for tuning the energy level alignment for mesoscopic perovskite‐based optoelectronics.
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