Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi 1− x  Sb  x  ) 2 Te 3  Nanowires | Zendy

Hamdou Bacel | Zendy; Gooth Johannes | Zendy; Böhnert Tim | Zendy; Dorn August | Zendy; Akinsinde Lewis | Zendy; Pippel Eckhard | Zendy; Zierold Robert | Zendy; Nielsch Kornelius | Zendy

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Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi 1− x Sb x ) 2 Te 3 Nanowires

Author(s) -

Hamdou Bacel,

Gooth Johannes,

Böhnert Tim,

Dorn August,

Akinsinde Lewis,

Pippel Eckhard,

Zierold Robert,

Nielsch Kornelius

Publication year - 2015

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201500280

Subject(s) - thermoelectric effect , nanowire , materials science , topological insulator , thermoelectric materials , trigonal crystal system , nanotechnology , topology (electrical circuits) , condensed matter physics , crystallography , crystal structure , thermodynamics , physics , electrical engineering , chemistry , engineering

A vapor–liquid–solid method for the growth of single‐crystalline (Bi 1− x Sb x ) 2 Te 3 nanowires with adjustable Bi–Sb mixing ratios is presented. Thermoelectric measurements on individual nanowires indicate a significant contribution from topological surface states to the total transport over the entire chemical composition range.

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