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Monolithically Integrated Circuits from Functional Oxides
Author(s) -
Jany Rainer,
Richter Christoph,
Woltmann Carsten,
Pfanzelt Georg,
Förg Benjamin,
Rommel Marcus,
Reindl Thomas,
Waizmann Ulrike,
Weis Jürgen,
Mundy Julia A.,
Muller David A.,
Boschker Hans,
Mannhart Jochen
Publication year - 2014
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201300031
Subject(s) - materials science , oxide , electronic circuit , electronics , transistor , integrated circuit , heterojunction , complex oxide , optoelectronics , semiconductor , nanotechnology , interface (matter) , electrical engineering , voltage , engineering , capillary number , capillary action , metallurgy , composite material
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported that utilize the two‐dimensional electron liquid generated at the LaAlO 3 /SrTiO 3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics.