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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)
Author(s) -
Zhao Xiaolong,
Ma Jun,
Xiao Xiangheng,
Liu Qi,
Shao Lin,
Chen Di,
Liu Sen,
Niu Jiebin,
Zhang Xumeng,
Wang Yan,
Cao Rongrong,
Wang Wei,
Di Zengfeng,
Lv Hangbing,
Long Shibing,
Liu Ming
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870100
Subject(s) - resistive random access memory , materials science , resistor , optoelectronics , resistive touchscreen , electrical conductor , dissipation , current (fluid) , graphene , nanotechnology , protein filament , electrical engineering , composite material , physics , engineering , voltage , thermodynamics
In article number 1705193 , Qi Liu, Zengfeng Di, Ming Liu, and co‐workers break the typical current‐retention dilemma in cation‐based resistive switching (RS) devices for the first time by centralizing/decentralizing the conductive‐filament distribution to bidirectionally modulate the conductivefilament stability. Both a fast RS selector, with high on‐state current, and low‐power‐dissipation memory are observed for a one selector‐one resistor (1S1R) memory array, which is considered as the most possible practical application scheme for high‐density 3D integration of resistiveswitching random access memory (RRAM).
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