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Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
Author(s) -
Lee Young Tack,
Jeon Pyo Jin,
Lee Kwang H.,
Ha Ryong,
Choi HeonJin,
Im Seongil
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201051
Subject(s) - materials science , nanowire , ferroelectricity , non volatile memory , transistor , optoelectronics , layer (electronics) , resistor , nanotechnology , ferroelectric capacitor , field effect transistor , voltage , electrical engineering , dielectric , engineering
A one‐dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top‐gate ferroelectric field‐effect transistor with a ferroelectric polymer while the rest is used as resistors.