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Guided Formation of a Sub‐10 nm Silicide Dot Array on an Area Patterned by Electron‐Beam Lithography
Author(s) -
Wi J.S.,
Lee T.Y.,
Kim H.M.,
Lee H.S.,
Nam S. W.,
Shin I. J.,
Shin K. H.,
Kim K.B.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701043
Subject(s) - silicide , electron beam lithography , lithography , nanometre , materials science , stencil lithography , nanotechnology , next generation lithography , electron , optoelectronics , silicon , resist , layer (electronics) , physics , composite material , quantum mechanics
A method for forming sub‐10 nm silicide dots is reported. Crystalline Pd 2 Si dots with a diameter of approximately 8 nm are formed on a pattern with a scale of a few tens of nanometers defined by electron‐beam lithography (see figure, scale bar is 200 nm).