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Hybrid Field‐Effect Transistor Based on a Low‐Temperature Melt‐Processed Channel Layer
Author(s) -
Mitzi D.B.,
Dimitrakopoulos C.D.,
Rosner J.,
Medeiros D.R.,
Xu Z.,
Noyan C.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20021203)14:23<1772::aid-adma1772>3.0.co;2-y
Subject(s) - materials science , saturation (graph theory) , field effect transistor , polyimide , transistor , optoelectronics , silicon , layer (electronics) , composite material , electrical engineering , voltage , engineering , mathematics , combinatorics
Melt‐processed organic–inorganic perovskite channel layers (see Figure) are demonstrated in field‐effect transistors fabricated on both silicon and polyimide substrates. Linear and saturation regime field‐effect mobilities for the melt‐processed devices are enhanced relative to the values achieved for analogous spin‐coated devices due, at least in part, to the improved grain structure of the melt‐processed films.