Premium
Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers
Author(s) -
Strauf S.,
Michler P.,
Gutowski J.,
Klude M.,
Hommel D.,
Wolverson D.,
Davies J.J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<245::aid-pssb245>3.0.co;2-s
Subject(s) - photoluminescence , acceptor , shallow donor , scattering , excitation , materials science , spectroscopy , raman scattering , raman spectroscopy , molecular physics , chemistry , atomic physics , condensed matter physics , doping , optoelectronics , optics , physics , quantum mechanics
Pseudomorphically grown p‐ZnSe:N layers being as thin as 100, 20, 10 and 5 nm embedded in ZnMgSSe barriers were investigated by means of photoluminescence and spin‐flip‐Raman (SFR) scattering spectroscopy. A new donor–acceptor‐pair (DAP) band has been observed involving a very shallow donor with a binding energy of (19 ± 2) meV and the well‐known N acceptor on Se site. Further evidence for a new donor center is given by transitions in angle‐dependent SFR scattering measurements which correspond to an isotropic (donor‐like) g ‐value of (1.49 ± 0.03). The 19 meV donor is interpreted as the negatively charged state of the usually found 52 meV deep donor in ZnSe:N. This is supported by the temperature behavior of the DAP band and, further, by its pronounced appearance for resonant excitation into the barriers quite similar to the behavior of trions.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom