Morphology of Porous Silicon Layers Deduced from Polarization Memory Experiments | Zendy

Diener J. | Zendy; Kovalev D. | Zendy; Polisski G. | Zendy; Künzner N. | Zendy; Koch F. | Zendy

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Morphology of Porous Silicon Layers Deduced from Polarization Memory Experiments

Author(s) -

Diener J.,

Kovalev D.,

Polisski G.,

Künzner N.,

Koch F.

Publication year - 2001

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/1521-3951(200103)224:1<297::aid-pssb297>3.0.co;2-4

Subject(s) - porous silicon , materials science , photoluminescence , morphology (biology) , polarization (electrochemistry) , porosity , silicon , ellipsoid , porous medium , optics , crystallography , mineralogy , optoelectronics , composite material , geology , chemistry , physics , paleontology , geodesy

The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.

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