Carrier–Carrier Correlations in Strain‐Induced Quantum Dots | Zendy

Braskén M. | Zendy; Lindberg M. | Zendy; Sundholm D. | Zendy; Olsen J. | Zendy

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Carrier–Carrier Correlations in Strain‐Induced Quantum Dots

Author(s) -

Braskén M.,

Lindberg M.,

Sundholm D.,

Olsen J.

Publication year - 2000

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/1521-3951(200009)221:1<37::aid-pssb37>3.0.co;2-t

Subject(s) - quantum dot , schrödinger equation , strain (injury) , physics , quantum , reliability (semiconductor) , electron , energy (signal processing) , particle (ecology) , quantum mechanics , condensed matter physics , statistical physics , medicine , oceanography , geology , power (physics)

We present results of a full configuration interaction (FCI) calculation for a strain‐induced quantum dot. FCI is a numerically exact diagonalization method for finite many‐particle systems. We solve the Schrdinger equation for low laying energy levels for systems consisting of up to four electron–hole pairs. Controlled approximations are made for larger systems. The results allow us to study the reliability of the free particle and Hartree‐Fock approximations. We find that correlations must be necessarily included in order to obtain reliable results. The energy structure obtained is consistent with photoluminescence measurements on strain‐induced quantum dots induced by InP islands on a GaAs–InGaAs quantum well.

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