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Photoluminescence from InGaAs/GaAs MQW Heterostructures under Real Space Transfer
Author(s) -
Revin D. G.,
Aleshkin V. Ya.,
Andronov A. A.,
Gaponova D. M.,
Gavrilenko V. I.,
Malkina I. G.,
Uskova E. A.,
Zvonkov B. N.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199711)204:1<184::aid-pssb184>3.0.co;2-r
Subject(s) - photoluminescence , heterojunction , materials science , optoelectronics , electric field , quantum well , doping , band gap , spectral line , condensed matter physics , optics , physics , laser , quantum mechanics , astronomy
Abstract Lateral electric field (up to 2 kV/cm) effects on the band gap photoluminescence from selectively doped p‐type MQW In x Ga 1— x As/GaAs heterostructures under real space transfer have been studied. Peculiarities of the photoluminescence spectra associated with hole heating and escape from quantum wells to barriers have been observed.