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Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convertthermal energy in the environment into random bitstreams for computationalmodeling and cryptography. We recently showed that perpendicular MTJs activatedby nanosecond pulses can generate true random numbers at high data rates. Here,we explore the dependence of probability bias-the deviations from equalprobability (50/50) 0/1 bit outcomes-of such devices on temperature, pulseamplitude, and duration. Our experimental results and device model demonstratethat operation with nanosecond pulses in the ballistic limit minimizesvariation of probability bias with temperature to be far lower than that ofdevices operated with longer-duration pulses. Further, operation in theshort-pulse limit reduces the bias variation with pulse amplitude whilerendering the device more sensitive to pulse duration. These results aresignificant for designing TRNG MTJ circuits and establishing operatingconditions.

Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices