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We report the fabrication and testing, at 4.2 K, of an SISFS device, where S,F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy),and an insulator (AlOx), respectively. The F layer covers about one half of thetop electrode of the SIS Josephson junction and is positioned off-center.Electric current, I _tr, along the S electrode can change the magnetization ofthe F layer in such a way that, for one direction of I_tr, a magnetic fluxpenetrates the junction perpendicular to the layers, whereas for the oppositedirection, the perpendicular magnetic flux can be removed. In the former state,the modulation pattern of the Josephson critical current, Ic, in the magneticfield, H, may acquire minimum near H=0, and restores its usual shape withmaximum in the second state. These states can be used for building a compactcryogenic memory compatible with single flux quantum electronics.

Electrically-controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory