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Defects play an important role in determining the type of carriers as well ason tuning the physical properties of layered materials. In this study, we havedemonstrated that by varying the growth kinetics one can control the defectsand can achieve electrons or holes dominated Bi2Te3 single crystals usingmodified Bridgman method. The correlation between structural defects and thetype of dominant charge carriers in crystals are discussed using X-Raydiffraction and Hall resistivity. Electrons are found to be originating from Tevacancy type defects, while holes are manifested from predominant structuraldefects viz. Bi_Te antisite defects or interstitial Te atoms. We observe thatthe alteration of charger carriers from electrons to holes have enhancedmagnetoresistance (MR) from 103% to 224%. The enhancement in MR emerges from 2Dmultichannel quantum coherent conduction mechanism.

Role of defects on carrier dynamics and transport mechanism in Bi2Te3 single crystals