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The transport properties of hot holes in silicon at cryogenic temperaturesexhibit several anomalous features, including the emergence of two distinctsaturated drift velocity regimes and a non-monotonic trend of the current noiseversus electric field at microwave frequencies. Despite prior investigations,these features lack generally accepted explanations. Here, we examine themicroscopic origin of these phenomena by extending a recently developedab-initio theory of high-field transport and noise in semiconductors. We findthat the drift velocity anomaly may be attributed to scattering dominated byacoustic phonon emission, leading to an additional regime of drift velocitysaturation at temperatures $\sim 40$ K for which the acoustic phonon occupationis negligible; while the non-monotonic trend in the current noise arises due tothe decrease in momentum relaxation time with electric field. The formerconclusion is consistent with the findings of prior work, but the latterdistinctly differs from previous explanations. This work highlights the use ofhigh-field transport and noise phenomena as sensitive probes of microscopiccharge transport phenomena in semiconductors.

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles