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Pristine van der Waals (vdW) interfaces between two-dimensional (2D) andother materials are core to emerging optical and electronic devices. Theirdirect fabrication is, however, challenged as the vdW forces are weak andcannot be tuned to accommodate integration of arbitrary layers withoutsolvents, sacrificial-layers or high-temperatures, steps that can introducedamage. To address these limitations, we introduce a single-step 2Dmaterial-to-device integration approach in which forces promoting transfer aredecoupled from the vdW forces at the interface of interest. We use thisadhesive matrix transfer to demonstrate conventionally-forbidden directintegration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics(SiO2, Al2O3), and scalable, aligned heterostructure formation, bothfoundational to device development. We then demonstrate a single-stepintegration of monolayer-MoS2 into arrays of transistors. With no exposure topolymers or solvents, clean interfaces and pristine surfaces are preserved,which can be further engineered to demonstrate both n- and p-type behavior.Beyond serving as a platform to probe the intrinsic properties of sensitivenanomaterials without the influence of processing steps, our technique allowsefficient formation of unconventional device form-factors, with an example offlexible transistors demonstrated.

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer