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A robust process for fabricating intrinsic single-photon emitters in siliconnitride has been recently established. These emitters show promise for quantumapplications due to room-temperature operation and monolithic integration withthe technologically mature silicon nitride photonics platform. Here, thefundamental photophysical properties of these emitters are probed throughmeasurements of optical transition wavelengths, linewidths, and photonantibunching as a function of temperature from 4.2K to 300K. Important insightinto the potential for lifetime-limited linewidths is provided throughmeasurements of inhomogeneous and temperature-dependent homogeneous broadeningof the zero-phonon lines. At 4.2K, spectral diffusion was found to be the mainbroadening mechanism, while time-resolved spectroscopy measurements revealedhomogeneously broadened zero-phonon lines with instrument-limited linewidths.

Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures