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Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitutionof CdS by an alternative buffer layer. However, the substitute buffer layer mayintroduce electrical barriers in the device due to unfavorable band alignmentat the other interfaces such as between buffer/ZnO i-layer. This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively. The devices prepared with these layers arecharacterized by current-voltage and photoluminescence measurements. Numericalsimulations are performed to comprehend the influence of electrical barriers onthe device characteristics. An optimal composition of Zn1 xMgxO x = 0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of ~1.6 eV, suppressing interface recombination and avoiding barriers.Optimized buffer composition together with a suitable i-layer led to a devicewith 14 % efficiency and an open-circuit voltage of 943 mV. A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al:(Zn,Mg)O showsthe necessity to replace the ZnO i-layer with Al:(Zn,Mg)O i-layer for ahigh-efficiency device.

Electrical barriers and their elimination by tuning (Zn,Mg)O composition  in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion  efficiency