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In recent years, two-dimensional (2D) layered semiconductors have receivedmuch attention for their potential in next-generation electronics andoptoelectronics. Wide-bandgap 2D semiconductors are especially important inblue and ultraviolet wavelength region, while there are very few 2D materialsin this region. Here, monolayer \b{eta}-type zirconium nitride chloride(\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layeredmaterial with a bandgap of ~3.0 eV in bulk. Systematical investigation oflayer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulkreveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly,this A1g peak is absent in monolayer, suggesting that it is a fingerprint toquickly identify monolayer and for the thickness determination of 2D ZrNCl. Theback-gate field-effect transistor based on few-layer ZrNCl shows a high on/offratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl forelectronic applications.

Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl