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Dynamics of nonradiative excitons with large in-plane wave vectors forming aso-called reservoir is experimentally studied in a high-quality semiconductorstructure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum wellby means of the non-degenerate pump-probe spectroscopy. The exciton dynamics isvisualized via the dynamic broadening of the heavy-hole and light-hole excitonresonances caused by the exciton-exciton scattering. Under the non-resonantexcitation free carriers are optically generated. In this regime the excitondynamics is strongly affected by the exciton-carrier scattering. In particular,if the carriers of one sign are prevailing, they efficiently deplete thereservoir of the nonradiative excitons inducing their scattering into the lightcone. A simple model of the exciton dynamics is developed, which considers theenergy relaxation of photocreated electrons and holes, their coupling intoexcitons, and exciton scattering into the light cone. The model well reproducesthe exciton dynamics observed experimentally both at the resonant andnonresonant excitation. Moreover, it correctly describes the profiles of thephotoluminescence pulses studied experimentally. The efficient exciton-electroninteraction is further experimentally verified by the control of the excitondensity in the reservoir when an additional excitation creates electronsdepleting the reservoir.

Dynamics and control of nonradiative excitons - free carriers mixture in GaAs/AlGaAs quantum wells