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The emerging wide bandgap BAlN alloys have potentials for improvedIII-nitride power devices including high electron mobility transistor (HEMT).Yet few relevant studies have been carried. In this work, we have investigatedthe use of the B0.14Al0.86N alloy as part or entirety of the interlayer betweenthe GaN buffer and the AlGaN barrier in the conventional GaN-based highelectron mobility transistor (HEMT). The numerical results show considerableimprovement of the two-dimensional electron gas (2DEG) concentration with small2DEG leakage into the ternary layer by replacing the conventional AlNinterlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybridinterlayer. Consequently, the transfer characteristics can be improved. Thesaturation current can be enhanced as well. For instance, the saturationcurrents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayerand the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for theAlN interlayer when VGS-Vth= +3 V.

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor