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This paper presents low power dissipation, low phase noise ring oscillators(ROs) based on Semiconductor Manufacturing International Corporation (SMIC)0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, thecharacterization and modelling of CMOS at LHT are presented. Thetemperature-dependent device parameters are revised and the model then showsgood agreement with the measurement results. The ring oscillator is thendesigned with energy efficiency optimization by application of forward bodybiasing (FBB). FBB is proposed to compensate for the threshold voltage (VTH)shift to preserve the benefits of the enhancement of the carrier mobility at4.2K. The delay per stage ({\tau}p), the static current (ISTAT), the dynamiccurrent (IDYN), the power dissipation (P) and the phase noise (L(foff)) areanalyzed at both 298 K and 4.2 K, with and without FBB. The performance of thedesigned RO in terms of speed ({\tau}p=179ps), static current (23.55nA/stage),power dissipation (2.13{\mu}W) and phase noise (-177.57dBc/Hz@1MHz) can beachieved at 4.2K with the supply voltage (VDD) reduced to 0.9V.

Characterization of 0.18{\mu}m CMOS Ring Oscillator at Liquid Helium Temperature