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We report on the longitudinal and Hall resistivities of a HgTe quantum wellwith inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH)regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperaturedependence of the QH plateau-plateau transition (PPT) widths and of variablerange hopping (VRH) conduction on the Hall plateaus are analyzed. The data arepresented in a genuine scale form both for PPT regions and for VRH regime.Estimations for the degree of the carrier localization length divergence reveala decisive role of the long-range random potential (the potential of remoteionized impurities) in the localization - delocalization processes in the QHregime for the system under study.

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure