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GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectricand a self-aligned Si implanted source/drain are demonstrated. Thermal annealconditions are optimized for the source/drain impurity activation. Temperaturedependent electrical characteristics are investigated. Different electricalbehaviors are observed in two different temperature regions and the mechanismsunderneath are proposed. Off-state drain current is generation currentdominated in the low temperature regions and is diffusion current dominated inthe high temperature regions.

Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain