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Experimental results of direct measurement of resonant monochromaticterahertz emission optically excited in InGaAs transistor channels arepresented. The emission is attributed to two-dimensional plasma waves excitedby photogeneration of electron-hole pairs in the channel at the frequency $f_0$of the beating of two cw-laser sources. The presence of resonances for theradiation emission in the range of $f_0\pm 10$ GHz (with $f_0$ from 0.3 up to0.5 THz) detected by a Si-bolometer is found. Numerical results support thatsuch a high quality of the emission resonances can be explained by the approachof an instability in the transistor channel.

THz emission induced by optical beating in nanometer-length field-effect-transistors