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We report the density-functional calculations that systematically clarify thestable forms of carbon-related defects and their energy levels in amorphousSiO$_2$ using the melt-quench technique in molecular dynamics. Considering theposition dependence of the O chemical potential near and far from theSiC/SiO$_2$ interface, we determine the most abundant forms of carbon-relateddefects: Far from the interface, the CO$_2$ or CO in the internal space inSiO$_2$ is abundant and they are electronically inactive; near the interface,the carbon clustering is likely and a particular mono-carbon defect and adi-carbon defect induce energy levels near the SiC conduction-band bottom, thusbeing candidates for the carrier traps.

Structural stability and energy levels of carbon-related defects in amorphous SiO$_2$ and its interface with SiC