English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigate the gate-voltage dependence of the magnetoconductivity ofseveral amorphous InGaZnO$_4$ (a-IGZO) thin-film transistors (TFTs). Themagnetoconductivity exhibits gate-voltage- controlled competitions between weaklocalization (WL) and weak antilocalization (WAL), and the respective weightsof WL and WAL contributions demonstrate an intriguing universal dependence onthe channel conductivity regardless of the difference in the electricalcharacteristics of the a-IGZO TFTs. Our findings help build a theoreticalinterpretation of the competing WL and WAL observed in the electron systems ina-IGZO TFTs.

applied physics express

Universal dependence on the channel conductivity of the competing weak  localization and antilocalization in amorphous InGaZnO$_4$ thin-film  transistors