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Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunneljunction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer aregrown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assistedmolecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaNshow chemically abrupt and sharp interfaces in a wide range of compositions andare seen to have high structural and optical properties as verified by X-raydiffraction and spatially resolved cathodoluminescence measurements. Theprocessed LEDs reveal clear rectifying behavior with a low contact and buriedtunnel junction resistivity. By virtue of the top n+-GaN layer with a lowresistance, excellent current spreading in the LEDs is observed at low currentsin this device structure. A few of new device possibilities based on thisunique design are discussed.

Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy