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The  irradiation  of  Fe  and  Ar  ion  was  applied  on  the surface  of  diamond/Si  thin  film  to  know  its  effect on  the morphology  of  thin  film.The  magnetoresistance  property  was  also  studied.  Ion  irradiation  treatment  using  Fe  ion followed by argon ion at the energy of 70 keV and a dose of 1 x 1015 ion/cm2 have been conducted on the surface of two types of thin film, diamond/Si (111) and diamond/Si(100). Both thin films were made by using a CVD method, and the thickness of the thin film is 1000-nm. From simulations using the software called Stopping and Range of Ions in Matter (SRIM), it is known that Fe and Argon ion penetration into the surface of the thin film are respectively 512 and 603 Angstroms.  After  that  the  thin  film  sample  was  irradiated  with  ion  Fe  and  Ar,  and  the  property  behavior  of  the morphological  change  of  thin  film  were  studied  through  Scanning  Electron  Microscopy  (SEM)  and  Atomic  Force Microscopy (AFM). The grain size range of thin filmon diamond films / Si (100) was reduced from 115-322 nm to 147-169  nm, suggesting  the  effect  of  irradiation  on the  surface  morphology.  The  magnetoresistance  property  is approximately 0.15% at room temperature and magnetic field external H = 0.8 Tesla

The Effect of Irradiation of Fe and Ar Ion on the Surface Morphology of Diamond Thin Film Related to the Magnetoresistance Property