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In this paper, we will investigate the activation energies of Nb for TiO using Hall effect measurement and photoluminescence (PL) system. Nb-doped TiO thin film was grown on SrTiO substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

The activation Energy of the Niobium donor in n-type TiO2 film grown by Pulsed Laser Deposition

The activation Energy of the Niobium donor in n-type TiO₂ film grown by Pulsed Laser Deposition