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Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to 6 × 10 Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below 1 × 10 Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to 9.8 × 10 Ω · cm. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of 4 × 10 Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

Effects of oxygen partial pressure on the properties of indium tin oxide film on PET substrates by RF magnetron sputtering