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Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University, Busan 614-714, Korea*LumiGNtech Co., Ltd., Room 206, Business Incubator Building, Seoul 153-801, Korea(Received June 5, 2014)(Revised June 16, 2014)(Accepted June 18, 2014)Abstract In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have beeninvestigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surfaceroughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as theincreasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RCand the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/IIIratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shapedazimuthal dependence over 360

Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE