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The mechanism of photoluminescence (PL) quenching of thin amorphous N,N'-bis(3-methylphenyl)- N,N'-bis(phenyl)benzidine (TPD) films exposed to UV light in air is studied. TPD is small organic molecule widely used in production of organic light emmiting devices (OLEDs). Photoluminescence of TPD films decays exponentially with time of irradiation, i.e. with the increase of concentration of impurities (photo-oxidized TPD molecules) generated by UV irradiation in air. Intensity of PL decreases to half of its original value when the concentration of impurities reaches 0.4%. Average distance between impurities (acceptors) is almost an order of magnitude larger than average distance between host TPD molecules (donors). Direct long range Forster energy transfer is ruled out as the mechanism of PL quenching, as the overlap between donor and acceptor is lacking, and exciton self-diffusion in TPD films is postulated for the mechanism. The presence of oxidation products is confirmed by infrared (IR) spectroscopy. Vibrational spectra of TPD molecule and few other possible products of photo-oxidation of TPD molecule, obtained by density functional theory, are compared to experimental IR spectra

Mechanism of photoluminescence quenching in thin films of N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine irradiated by UV light in air