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Various researchers have highlighted the integration of small-dimension, optical communicationand micro-systems into mainstream silicon fabrication technology (Bourouina et al 1996; Clayes, 2009; Fitzgerald & Kimerling, 1998; Gianchanadni, 2010; Robbins , 2000; Soref , 1998). The realization of sufficiently efficient light-emitters have, been a major technological challenge. A research area, known as “Silicon Photonics“, has emerged in recent years (Kubby and Reed , 2005-2010; Savage 2002; Wada, 2004). This technology offers the advanced processing of data at ultra high speeds and provides advanced optical signal processing. It can analyse diverse optical data directly on chip, and may even contribute towards solving the interconnect density problem, associated with current microprocessor systems. Until now, this technology has been primarily established at 1550 nm. The reason is to conform with the main long haul and low loss telecommunication bands. The realization of waveguides, modulators, resonators, filters etc. on silicon platforms has been achieved until now with relative ease by using mainly Silicon-on-Insulator (SOI) technology. Two main application fields have been developed, namely (1) high speed optical communication with modulation speeds and bandwidths reaching up to THz , utilizing SiGe technology , and (2) the so-called ”Lab on chip“ approach, where the main goal is the realization of an optical micro-system, which can perform certain analysis of the environment or attached media. In the absence of an efficient light source at 1550 nm on a chip, these systems operate currently with external light sources. They also incorporate Si-Ge detectors, which are not compatible with mainstream silicon technology (Beals at al, 2008; Lui et al, 2010; Wada, 2004). The integration of germanium into silicon structures requires the addition of complex and very expensive processing procedures. Recently, a Ge-onSi laser source was announced by Lui et al. in 2010. This technology provides coherent optical emission on a chip, but utilizes quite complex strained Si-Ge layer technology. Making use of adequately emitting Complementary Metal Oxide Semiconductor (CMOS) optical sources, together with good silicon detectors, shows good potential to manufacture diverse new optical communication and integrated systems directly onto CMOS silicon

Integrating Micro-Photonic Systems and MOEMS into Standard Silicon CMOS Integrated Circuitry