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Scribing is cutting process to determine production amount and characteristic of LED chip. So it is an important process for fabrication of LED chip. Mechanical process and conventional scribing process with laser sourcehas several problems such as thermal deformation, decreasing of material strength and limitation of cutting region.To solve these problems, internal laser scribing process that generates void in wafer and derives self-crack has been researched. However, studies of sapphire wafer cutting by internal laser scribing process for fabrication of LED chipare still insufficient. In this paper, cutting parameters were determined to apply internal laser scribing process for sapphire wafer for fabrication of LED chip. Then, foundation of cutting condition was established to set up internallaser scribing system through investigation of cutting characteristics by several experiments. Keywords : Internal laser scribing, Laser ablation, LED chip, Pulse laser, Sapphire wafer    (R8E0-)  ‘Z-stocked Multi Focusing  Thick Epi-Wafer  Laser System ’    .

Analysis of Cutting Characteristic of the Sapphire Wafer Using a Internal Laser Scribing Process for LED Chip