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We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600 o C and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600 o C were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600 o C. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600 o C. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.

Characteristics of IGZO Films Formed by Room Temperature with Thermal Annealing Temperature