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Surface Technology R B revised August 6, 2014 ; accepted August 7, 2014)AbstractThe primary purpose of this research is to investigate how much the complexing agent in electroless Cuelectrolytes will affect adhesion strength between copper film and Ta diffusion barrier for Cu interconnectof semiconductor. The adhesion strength using rochelle’s salt as complexing agent was higher than the caseof using EDTA-4Na. Effect of complexing agent on adhesion strength and electrical resistivity was studiedin crystal structural point of view.

Effect of Complexing Agents on Adhesion Strength between Electroless Copper Film and Ta Diffusion Barrier