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A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/ insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

A Review: Comparison of Fabrication and Characteristics of Flexible ReRAM and Multi-Insulating Graphene Oxide Layer ReRAM