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Adhesion of the SiCN barrier layer and Cu film interface is one of the important characteristics that reflect the interfacial structure. NH3 plasma treatment of the Cu surface is a well-known way of improving adhesion. The results of X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) depth profiles indicate that the plasma treatment imparts a difference to the formation of the interface with SiCN. Adhesion properties are regarded as fracture energies measured by double cantilever beam (DCB) and 4-point bending (4PB) techniques. The influence of the NH 3 plasma treatment of the Cu surface on adhesion is quantitatively discussed. The treated samples showed approximately twice the fracture energy of the non-treated samples. After 4PB and DCB measurements, fracture surfaces were investigated by XPS and atomic force microscopy (AFM). The formation of a N-Cu chemical bond on the Cu surface was enhanced as a result of removing oxygen by the plasma treatment. N-Cu chemical bonding contributes substantially to better SiCN/Cu interfacial adhesion.

Quantitative Adhesion Properties and Interfacial Behavior of SiCN Barrier Layer and Cu Film