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Electrodeposited tin-indium eutectic alloy promises to replace tin-lead solder coatings in LSI flip-chip interconnections thanks to its lower melting point and provide superior in thermal fatigue resistance. Eutectic tin-indium alloy film was deposited at 0 .5•`3A/dm2 and at 25•Ž, in a sulfosuccinate bath using the additives 2 ,2'-Dithiodianiline, polyoxyethylene-ƒ¿naphthol and polyethlene glycol 1000. The coexistence of these additives markedly inhibited preferencial deposition of tin. The eutectic tin-indium alloy film consists ofƒÀ-Sn, In, InSn4 and In3Sn phases, and its solidus temperture was 117•Ž.

Electrodeposition of Sn-In Eutectic Alloy from Sulfosuccinate Bath for Flip-Chip Interconnection.