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Atomic layer deposition (ALD) is a key technique for the continued scaling ofsemiconductor devices, which increasingly relies on reproducible and scalableprocesses for interface manipulation of 3D structured surfaces on the atomicscale. While ALD allows the synthesis of conformal films at low temperaturewith utmost control over the thickness, atomically-defined closed coatings andsurface modifications are still extremely difficult to achieve because ofthree-dimensional growth during nucleation. Here, we present a route towardssub-nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon(Si) substrates for the spatial control of the surface charge density andinterface energetics. We use trimethylaluminum (TMA) in combination with remotehydrogen plasma instead of a gas-phase oxidant for the transformation ofsilicon oxide into alumina (AlOx). During the initial ALD cycles, TMA reactswith the surface oxide (SiO2) on silicon until there is a saturation ofbindings sites, after which the oxygen from the underlying surface oxide isconsumed, thereby transforming the silicon oxide into Si capped with AlOx.Depending on the number of ALD cycles, the SiO2 can be partially or fullytransformed, which we exploit to create sub-nanometer thin and continuous AlOxlayers deposited in selected regions defined by lithographic patterning. Theresulting patterned surfaces are characterized by lateral AlOx/SiO2 interfacespossessing step heights as small as 0.3 nm and surface potential steps inexcess of 0.4 V. In addition, the introduction of fixed negative charges of $9\times 10^{12}$ cm$^{-2}$ enables modulation of the surface band bending, whichis relevant to the field-effect passivation of Si and low-impedance chargetransfer across contact interfaces.

Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina