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Differential Amplifier is a primary building block of analog and mixed signal circuit for pre-processing and signal conditioning of analog signal. FINFET devices with high-k gate oxide at 22nm technology are predominantly used for high speed and low power complex VLSI circuits. FINFET based differential amplifiers are widely used in ADC’s and signa l Processing applications due to their advantages in terms of power dissipation. Analog front end of complex VLSI circuits need to offer high gain, higher stability and low noise figure. Designing of FINFET based VLSI sub-circuits requires proper design procedure that can provide designers flexibility in controlling the circuit performances. In this paper, differential amplifier is designed using model parameters of high-k FINFET in 22nm technology. The conventional procedures for designing MOSFET based differential amplifier are modified for designing FINFET based differential amplifier. Schematic capture is carried out in Cadence environment and simulations are obtained considering 22nm FINFET PDK. The performance metrics are evaluated and optimized considering multiple iterations. The designed differential amplifier has slew rate of 6V/μSec and settling time of 0.9 μSec which is a desired metric for ADCs. Power Supply Rejection Ratio (PSRR) is 83 dB and dynamic range is 1.6754 V. Open loop DC gain of DA is achieved to be 103 dB with phase margin of 63 that demonstrates the advantages of DA designed in this work suitable for analog front end.

22nm FINFET Based High Gain Wide Band Differential Amplifier