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In this paper, we present a new technic based on t transient diffusion capacitance of the bifacial solar cell back surface recombination velocity (Sb) and the grain boundary recombination velocity (Sgb), we resolved the continuity equation in the base of the solar cell under monochro diffusion capacitance profile which decreases with the dynamic junction velocity (Sf), the back surface recombination velocity (Sb), the grain boundary recombination velocity (Sgb) and the high wave transient diffusion capacitance increases with the grains size (R).

A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)